DATABASE
Contents [Part 1]
Data 01 : Bi4Br4 crystal structure and first-principle calculations
Data 02 : α-Bi4I4 crystal structure and first-principle calculations
Data 03 : β-Bi4I4 crystal structure and first-principle calculations
Data 04 : Bi4Br2.8I1.2 crystal structure and first-principle calculations
Data 05 : α-Bi4I4 field effect transistor transport measurements
Data 06 : α-Bi4I4 Josephson junction transport measurements
Data | 01 Bismuth Bromide Bi4Br4
Quasi-1D bismuth bromide Bi4Br4 is not only a prime higher-order topological insulator with a large global band gap (~144 meV) but also a large-gap (~250 meV, 10 times room temperature) quantum spin Hall insulator in the atomic monolayer limit.
The crystal structure data from our XRD experiment and the first-principles tight-binding model data from our DFT and Wannier90 calculations at TACC are available.
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Data | 02 Bismuth Iodide α-Bi4I4
The low-temperature phase (T < Tc ~ 300K) bismuth iodide, or α-Bi4I4 is a candidate for the boundary-obstructed higher-order topological insulator.
The crystal structure data from our XRD experiment and the first-principles tight-binding model data from our DFT and Wannier90 calculations at TACC are available.
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Data | 03 Bismuth Iodide β-Bi4I4
The high-temperature phase (T > Tc ~ 300K) bismuth iodide, or β-Bi4I4 is the first material which realize the weak topological insulator phase.
The crystal structure data from our XRD experiment and the first-principles tight-binding model data from our DFT and Wannier90 calculations at TACC are available.
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Data | 04 Bi4Br2.8I1.2
Newly synthesized bismuth halide family material Bi4Br2.8I1.2 is an ideal weak topological insulator with very wide energy gap ~ 200 meV. Unlike β-Bi4I4, Bi4Br2.8I1.2 is stable in both very low and room temperature.
The crystal structure data from our XRD experiment and the first-principles tight-binding model data from our DFT and Wannier90 calculations at TACC are available.
Click the image for more details and downloads.
Data | 05 α-Bi4I4 field effect transistor transport experiment data
The raw data of our field effect transistor transport experiment in our paper, Y. Liu, et al., Gate-Tunable Transport in Quasi-One-Dimensional α‑Bi4I4 Field Effect Transistors, Nano Lett. 22, 1151-1158 (2022), is available.
The list of available raw data is the following:
(1) Magneto-transport (Fig. 2)
(2) temperature-dependent transport (Fig. 3)
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Data | 06 Supercurrent in α-Bi4I4
Josephson junction
The raw data of our supercurrent measurement in α-Bi4I4 Josephson junction in paper, Y. Liu, et al., Gate-Tunable Transport in Quasi-One-Dimensional α‑Bi4I4 Field Effect Transistors, Nano Lett. 22, 1151-1158 (2022), is available.
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